1 motorola smallsignal transistors, fets and diodes device data npn silicon maximum ratings rating symbol value unit collector emitter voltage v ceo 40 vdc collector base voltage v cbo 60 vdc emitter base voltage v ebo 6.0 vdc collector current e continuous i c 200 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics (1) characteristic symbol max unit thermal resistance, junction to ambient r ja 200 c/w thermal resistance, junction to case r jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector emitter breakdown voltage (2) (i c = 1.0 madc, i b = 0) v (br)ceo 40 e vdc collector base breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 60 e vdc emitter base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 6.0 e vdc base cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) i bl e 50 nadc collector cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) i cex e 50 nadc 1. indicates data in addition to jedec requirements. 2. pulse test: pulse width 300 s; duty cycle 2.0%. preferred devices are motorola recommended choices for future use and best overall value. order this document by 2n3903/d
semiconductor technical data *motorola preferred device case 2904, style 1 to92 (to226aa) 1 2 3 ? motorola, inc. 1996 collector 3 2 base 1 emitter rev 2
2 motorola smallsignal transistors, fets and diodes device data electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain (1) (i c = 0.1 madc, v ce = 1.0 vdc) 2n3903 2n3904 (i c = 1.0 madc, v ce = 1.0 vdc) 2n3903 2n3904 (i c = 10 madc, v ce = 1.0 vdc) 2n3903 2n3904 (i c = 50 madc, v ce = 1.0 vdc) 2n3903 2n3904 (i c = 100 madc, v ce = 1.0 vdc) 2n3903 2n3904 h fe 20 40 35 70 50 100 30 60 15 30 e e e e 150 300 e e e e e collector emitter saturation voltage (1) (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc v ce(sat) e e 0.2 0.3 vdc base emitter saturation voltage (1) (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) v be(sat) 0.65 e 0.85 0.95 vdc small signal characteristics current gain e bandwidth product (i c = 10 madc, v ce = 20 vdc, f = 100 mhz) 2n3903 2n3904 f t 250 300 e e mhz output capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) c obo e 4.0 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo e 8.0 pf input impedance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) 2n3903 2n3904 h ie 1.0 1.0 8.0 10 k w voltage feedback ratio (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) 2n3903 2n3904 h re 0.1 0.5 5.0 8.0 x 10 4 smallsignal current gain (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) 2n3903 2n3904 h fe 50 100 200 400 e output admittance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h oe 1.0 40 mhos noise figure (i c = 100 adc, v ce = 5.0 vdc, r s = 1.0 k w , f = 1.0 khz) 2n3903 2n3904 nf e e 6.0 5.0 db switching characteristics delay time (v cc = 3.0 vdc, v be = 0.5 vdc, t d e 35 ns rise time ( cc be i c = 10 madc, i b1 = 1.0 madc) t r e 35 ns storage time (v cc = 3.0 vdc, i c = 10 madc, 2n3903 i b1 = i b2 = 1.0 madc) 2n3904 t s e e 175 200 ns fall time t f e 50 ns 1. pulse test: pulse width 300 s; duty cycle 2.0%.
3 motorola smallsignal transistors, fets and diodes device data figure 1. delay and rise time equivalent test circuit figure 2. storage and fall time equivalent test circuit +3 v 275 10 k 1n916 c s < 4 pf* +3 v 275 10 k c s < 4 pf* < 1 ns 0.5 v +10.9 v 300 ns duty cycle = 2% < 1 ns 9.1 v +10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors typical transient characteristics figure 3. capacitance reverse bias voltage (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 figure 4. charge data i c , collector current (ma) 5000 1.0 v cc = 40 v i c /i b = 10 q, charge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 q t q a c ibo c obo t j = 25 c t j = 125 c
4 motorola smallsignal transistors, fets and diodes device data figure 5. turn on time i c , collector current (ma) 70 100 200 300 500 50 figure 6. rise time i c , collector current (ma) time (ns) 1.0 2.0 3.0 10 20 70 5 100 t , rise time (ns) figure 7. storage time i c , collector current (ma) figure 8. fall time i c , collector current (ma) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 r t , fall time (ns) f t , storage time (ns) s v cc = 40 v i c /i b = 10 v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v i c /i b = 10 i c /i b = 20 i c /i b = 10 i c /i b = 20 t s = t s 1 / 8 t f i b1 = i b2 typical audio small signal characteristics noise figure variations (v ce = 5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) figure 9. f, frequency (khz) 4 6 8 10 12 2 0.1 figure 10. r s , source resistance (k ohms) 0 nf, noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 14 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 500 i c = 100 a source resistance = 1.0 k i c = 50 a
5 motorola smallsignal transistors, fets and diodes device data h parameters (v ce = 10 vdc, f = 1.0 khz, t a = 25 c) figure 11. current gain i c , collector current (ma) 70 100 200 3 00 50 figure 12. output admittance i c , collector current (ma) h , current gain h , output admittance ( mhos) figure 13. input impedance i c , collector current (ma) figure 14. voltage feedback ratio i c , collector current (ma) 30 1 00 50 5 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , voltage feedback ratio (x 10 ) re h , input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 2 1 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe 4 typical static characteristics figure 15. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 fe v ce = 1.0 v t j = +125 c +25 c 55 c
6 motorola smallsignal transistors, fets and diodes device data figure 16. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma figure 17. aono voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 1 . 2 0.2 figure 18. temperature coefficients i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 0.5 0 0.5 1 .0 0 60 80 120 140 160 180 20 40 100 coefficient (mv/ c) 200 1.0 1.5 2.0 200 t j = 25 c v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ v ce =1.0 v +25 c to +125 c 55 c to +25 c +25 c to +125 c 55 c to +25 c vc for v ce(sat) vb for v be(sat)
7 motorola smallsignal transistors, fets and diodes device data package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. dimension f applies between p and l. dimension d and j apply between l and k minimum. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l f b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.022 0.41 0.55 f 0.016 0.019 0.41 0.48 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 12.70 l 0.250 6.35 n 0.080 0.105 2.04 2.66 p 0.100 2.54 r 0.115 2.93 v 0.135 3.43 1 style 1: pin 1. emitter 2. base 3. collector case 02904 (to226aa) issue ad
8 motorola smallsignal transistors, fets and diodes device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo para meters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all ope rating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product cou ld create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motoro la, inc. motorola, inc. is an equal opportunity/affirmative action employer. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : nippon motorola ltd.; tatsumispdjldc, 6f seibubutsuryucenter, p.o. box 5405; denver, colorado 80217. 18004412447 3142 tatsumi kotoku, tokyo 135, japan. 81335218315 mfax : rmfax0@email.sps.mot.com touchtone 6 022446609 asia / pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, internet : http://designnet.com 51 ting kok r oad, tai po, n.t., hong kong. 85226629298 2n3903/d ?
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